In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
arxiv(2022)
摘要
The cross-over from quasi-two- to quasi-one-dimensional electron transport
subject to transverse electric fields and perpendicular magnetic fields are
studied in the diffusive to quasiballistic and zero-field to quantum Hall
regime. In-plane gates and Hall-bars have been fabricated from an
InGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about
6.8×10^11 cm^-2, mobility of 1.8×10^5 cm^2/Vs and an
effective mass of 0.042m_e after illumination. Magnetotransport measurements
at temperatures down to 50 mK and fields up to 12 T yield a high effective
Landé-factor of |g^*| = 16, enabling the resolution of spin-split subbands
at magnetic fields of 2.5 T. In the quantum Hall regime, electrostatic control
of an effective constriction width enables steering of the reflection and
transmission of edge channels, allowing a separation of fully spin-polarized
edge channels at filling factors ν = 1 und ν = 2. A change in the
orientation of a transverse in-plane electric field in the constriction shifts
the transition between Zeeman-split quantum Hall plateaus by ΔB
≈ 0.1 T and is consistent with an effective magnetic field of B_eff
≈ 0.13 T by spin-dependent backscattering, indicating a change in the
spin-split density of states.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要