Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate

In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (mHEMTs) on a GaAs substrate. The fabricated mHEMTs with a 100 nm gate length exhibited excellent DC and logic characteristics such as V-T = -0.13 V, g(m,max) = 949 mS/mm, subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering (DIBL) = 89 mV/V, and I-on/I-off ratio = 9.8 x 10(3) at a drain-source voltage (V-DS) = 0.5 V. In addition, the device exhibited excellent high-frequency characteristics, such as f(T)/f(max) = 261/304 GHz for the measured result and well-matched modeled f(T)/f(max) = 258/309 GHz at V-DS = 0.5 V, which is less power consumption compared to other material systems. These high-frequency characteristics are a well-balanced demonstration of f(T) and f(max) in the mHEMT structure on a GaAs substrate.