High-k MIM dielectric reliability study in 65nm node.

New multi-layer ALD HfO2/Al2O3/HfO2 laminate film with a capacitance density 8.3 fF/um(2) is evaluated in a MIM capacitor, in 65nm node process, for emerging applications in the automotive space which require higher use voltage and temperature than CMOS logic and DRAM applications. Apart from the typical considerations such as leakage current, capacitance linearity etc. the dielectric relaxation current behavior is also studied. We have performed a thorough reliability study on these films and demonstrate that they meet the stringent requirements for automotive safety applications.