Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm.S. Subhechha,Nouredine Rassoul,Attilio Belmonte, H. Hody,Harold Dekkers,Michiel J. van Setten,Adrian Chasin,Shamin H. Sharifi,S. Sutar, L. Magnarin,Umberto Celano,H. Puliyalil,S. Kundu,M. Pak,Lieve Teugels,D. Tsvetanova, N. Bazzazian,Kevin Vandersmissen,C. Biasotto,D. Batuk, J. Geypen, J. Heijlen,Romain Delhougne,Gouri Sankar KarSymposium on VLSI Technology (VLSI Technology)(2022)引用 1|浏览5暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要