First Demonstration of Fully CMOS-compatible Non-volatile Programmable Photonic Switch Enabled by Ferroelectric-SOI Waveguide for Next Generation Photonic Integrated Circuit.

We report the first demonstration of a fully CMOS-compatible non-volatile programmable photonic switch on the SOI photonic platform featuring Al-doped HfO 2 (HAO) ferroelectric technology. We innovate in utilizing remnant polarization (P r ) in the HAO film to modulate the refractive index of the waveguide, leading to a non-volatile modulation of the light propagating in the waveguide. Transparent indium tin oxide (ITO) is employed as the top electrode instead of metal to minimize the propagation loss. Our non-volatile programmable photonic switch operating at 1550 nm wavelength exhibits outstanding performances, including a maximum resonance peak shift of 0.2 nm with one of the highest extinction ratios of 8.9 dB at a low working voltage of 5 V and a decent endurance of 4×10 ⁴ cycles.