Over 12% efficient kesterite solar cell via back interface engineering

Yunhai Zhao,Zixuan Yu,Juguang Hu,Zhuanghao Zheng,Hongli Ma,Kaiwen Sun,Xiaojing Hao,Guangxing Liang,Ping Fan,Xianghua Zhang,Zhenghua Su

Journal of Energy Chemistry（2022）

引用 28|浏览10

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摘要

The effects of WO3 intermediate layer on the microstructure, electrical and defects properties of CZTSSe films are revealed for the first time, and high quality CZTSSe crystal and low back interface contact barrier are obtained.

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关键词

Cu2ZnSn(S,Se)4,WO3 intermediate layer,Crystal growth,Minority carrier diffusion length,Interface contact quality

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