Impurity photo-ionization cross section and stark shift of ground and two low-lying excited electron-states in a core/shell ellipsoidal quantum dot

A new investigation on photo-ionization cross section (PICS) of a donor impurity confined in a GaAs/AlGaAs core/shell elliptic quantum dots (CSEQDs) has been performed under electric field (EF) effect. By means of the finite element method (FEM), we have computed the binding energy (BE), oscillator strength Pif and PICS within the framework of the effective mass theory (EMT). Our numerical results reveal that the stark shift is greatly dependent on the strength of the EF, the degree of ellipticity β, and the states of electronic transitions. It can take positive or negative values depending on the situation. In addition, the photo-ionization describing the transition from the donor impurity ground-state (1simp) to one of the conduction sub-band states (1s0, 2s0, and 2p0) is affected by the shape of the quantum dots (QDs) and the EF. We demonstrated that varying internal and external parameters may control the photo-ionization cross-section. These characteristics can be exploited to fabricate optoelectronic devices like QD infrared photodetectors.