A Digital Temperature Sensor Based on 10b SAR ADC for Non-linear Temperature Dependency Compensation in 3D NAND Flash Memory

Kyoung-Jun Roh, Min-Ki Jeon,Jaewoo Park,Myoungbo Kwak,Chi-Weon Yoon,Youngdon Choi,Jung-Hwan Choi

2022 IEEE Asian Solid-State Circuits Conference (A-SSCC)（2022）

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摘要

Recently, NAND memory has applied MLC to store multi-bit data in one cell [1–2]. Therefore, it is necessary to generate accurate word-line (WL) and bit-line (BL) voltages to perform normal NAND memory operation. However, as shown in Fig. 1(a), since the threshold voltage $(\mathrm{V}_{T})$ distribution of NAND memory changes with temperature, BL and WL voltage generators need to compensate for temperature.

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关键词

nand flash memory,digital temperature sensor,10b sar adc,non-linear

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