Pulsed Laser Deposition of In_0.1Ga_0.9N Nanoshapes by Nd:YAG Technique

In0.1Ga0.9N thin film was grown on a cheap glass substrate by the Nd:YAG pulsed laser deposition technique. The In0.1Ga0.9N thin films show the semi-crystalline structure as observed with X-ray diffraction (XRD). The surface morphology has a non-dense layer with both scattered nanospheres and agglomerated particles. These nanospheres tended to grow randomly on the glass substrate, as observed with field emission scanning electron microscopy (FESEM). The direct bandgap energy for In0.1Ga0.9N thin film was 2.08 eV, which is calculated using photoluminescence (PL) measurements. The Raman measurements illustrated two sets of phonon modes as A1(LO) and E2 high vibrational modes that are observed. The resonance behavior of the A1(LO) mode is experimentally verified and studied under laser light energy of 532 nm.