A Complete Analytical RF Model for Nanoscale Semiconductor-On-Insulator MOSFET

Properly validated theoretical models are needed to understand the device and circuit level performance of MOSFET at high frequency. Analytical as well as compact models have special significance due to its SPICE simulator compatibility. Perhaps, most of the RF modelling approaches requires experimental Y, Z or S parameters to start with, which limits their acceptability in SPICE simulators. Considering this, under an innovative approach, starting from basic device physics, a complete generalized analytical RF model is developed for Semiconductor-On-Insulator MOSFET. Mathematical expressions for important MOSFET parameters valid at RF range are developed. Numbers of unique and justified mathematical formulations are adopted throughout the analysis to keep the parameter expressions simple but accurate. Parameters expressions are used to simulate and plot Y parameters with different structural and operational variables. These results are compared with reference results to check for validity. RF performance of current and upcoming Semiconductor-On-Insulator MOSFET structures are simulated and compared for better device selectivity.