Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low I-OFF, High Endurance and Low V-th Drift 3D Crosspoint Memory

The doping effect on AsSeGe OTS materials is comprehensively studied. While B, C, S doped selectors suffer a stringent trade-off among V-th, I-OFF and cycling endurance, Si and In doped selectors demonstrate an extremely low V-tS (system threshold voltage when PCM is in SET state) and V-tR (system threshold voltage when PCM is in RESET state) drift characteristics. We demonstrated true crosspoint operation (by half-V scheme) in a 1k by 1k cross-point ADM memory arrays from an In doped AsSeGe selector integrated with PCM with extremely low I-OFF (similar to 3nA from a total 100 crosspoint cells), wide V-tS/V-tR memory window (similar to 2V main distribution memory window), 1E6 write cycles and low V-ts and V-tR drift characteristic (project<0.3V and 0.5V, respectively for one year) which is suggested for 3D crosspoint memory technology.