Analytical Modeling for a New Structure of Dielectric Pocket-Based Dual Material Double Gate TFET with Gate Oxide Stack

In this paper, a new structure of dielectric pocket-gate oxide stack dual material double gate tunnel FET (DP-GOS-DMDG TFET) is proposed and its analytical model for the surface potential and electric field is obtained by solving the two-dimensional Poisson’s equation in the silicon channel. Then, the drain current is extracted by integrating the band-to-band tunneling generation rate of carriers from the source valence band to the drain conduction band. The influence of dimensions and material of the dielectric pocket on the tunneling current of the proposed structure is investigated. It is shown that the inclusion of the low-k pocket (SiO 2 ) at the source side enhances the ON current. Whereas, the incorporation of the high-k pocket (HfO 2 ) at the drain side helps to minimize the ambipolar conduction. Additionally, the analytical results are compared with the data obtained from Silvaco ATLAS software to validate the proposed model. The proposed DP-GOS-DMDG TFET exhibits superior performance in terms of the ON current and ambipolar behavior compared to some previously reported DG TFETs.