Regulating WORM/Flash electrical memory behavior of metallopolymers through varying metal centers

1We reported the facile regulation of memory behavior of metallopolymers by varying the central metal ions.2The inserted Co and Ni ions in the porphyrin moieties of metallopolymers can enhance the intramolecular or intermolecular charge transfer (CT) and back charge transfer (CT) effect.3The logic gates and information display function based on NiPt-containing device have been successfully accomplished.