Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe2

Two-dimensional (2D) 2H-MoTe2 is an emerging semiconductor with promising electronic and optoelectronic properties. Meanwhile, the in-plane 2D epitaxy mechanism via the 1T ' to 2H phase transition allows the synthesis of 2H-MoTe2 on arbitrary surfaces. Here, we demonstrate two routes for tier-by-tier growth and one-step growth to synthesize multitier 2H-MoTe2 isolated by atomic layer deposition aluminum oxide (Al2O3). Raman, scanning transmission electron microscopy, and other characterizations show that the periodic 2H-MoTe2/Al2O3 multilayer structure exhibits the characteristics of large-area preparation and high crystallinity. Our direct multitier growth routes move the first step toward realizing 3D-ICs and nonvolatile memories based on semiconducting 2H-MoTe2.