A Sub‐Picojoule per Bit Integrated Magneto‐Optic Modulator on Silicon: Modeling and Experimental Demonstration

Integrated magneto-optic (MO) modulators are an attractive but not fully explored alternative to electro-optic (EO) modulators. They are current driven, structurally simple, and could potentially achieve high efficiency in cryogenic and room temperature environments where fJ bit(-1) optical interfaces are needed. In this paper, the performance and energy efficiency of a novel MO modulator at room temperature are for the first time assessed. First, a model of the micro-ring-based modulator is implemented to investigate the design parameters and their influence on the performance. Then, a fabricated device is experimentally characterized to assess its performance in terms of bit rate and energy efficiency. The model shows efficient operation at 1.2 Gbps using a 16 mA drive current, consuming only 155 fJ bit(-1). The experimental results show that the MO effect is suitable for modulation, achieving error-free operation above 16 mA with a power consumption of 258 fJ bit(-1) at a transient limited data rate of 1.2 Gbps.