Rare earth based solid-state qubit platforms

Rare earth ions (REIs) have emerged as a promising platform for quantum technology, especially as memories – given their long optical and spin coherence times. Along with a brief review of progress in the field, we show that doped thin films on silicon can be engineered to approach the properties shown in bulk REI doped crystals and can leverage CMOS nanofabrication methods for the development of integrated quantum devices.