Effect of Impurities on Charge and Heat Transport in Tubular Nanowires]{Effect of Impurities on Charge and Heat Transport in Tubular Nanowires

We calculate charge and heat current of charge carriers (electrons or holes), originating from a temperature gradient and a chemical potential difference between two ends of a tubular nanowire with different cross-sectional areas. We consider a nanowire based on a semiconductor material, and use the Landauer-B\"{u}ttiker approach to calculate the transport quantities. Values of the heat and charge current are calculated in the presence of different variations of impurities, with respect to the left temperature and left side chemical potential. Results are obtained for a temperature regime from 1 to 420 K and chemical potential 35 to 225 meV. The temperature difference between two sides is 35 K for all cases with a chemical potential difference of 5 meV. Electronic transmission is compared for the main prismatic cross-section geometries, in the presence of impurities of varying densities and strengths.