Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

Hanwen Wang, Qiu Chen,Yongping Yao, Linlin Che,Baitao Zhang,Hongkun Nie,Rongkun Wang

CRYSTALS(2023)

引用 0|浏览2
暂无评分
摘要
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful for solving these problems. In this work, the 4H-SiC samples with different surface roughness were processed by laser slicing. Findings revealed that good surface quality could reduce the damage to the wafer surface during laser slicing, reduce cleavage, and improve the flatness and uniformity of the modified layer. Thus, preprocessing on 4H-SiC can significantly improve the quality and efficiency of laser slicing.
更多
查看译文
关键词
silicon carbide,ultrafast laser,surface processing
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要