Thru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth

ADVANCED MATERIALS INTERFACES(2023)

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摘要
Controllable growth and facile transferability of a crystalline film with desired characteristics, acquired by tuning composition and crystallographic orientation, become highly demanded for advanced flexible devices. Here the desired crystallographic orientations and facile transferability of a crystalline film can be achieved by "thru-hole epitaxy" in a straightforward and undemanding manner with no limitation on the layer number and polarity of a 2D space layer and the surface characteristics. The crystallographic alignment can be established by the connectedness of the grown material to the substrate through a small net cross-sectional area of thru-holes, which also allows the straightforward detachment of the grown material. Thru-hole epitaxy can be adopted for the realization of advanced flexible devices on large scale with desired crystallographic orientation and facile transferability.
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关键词
crystallographic alignment,density functional theory,gallium nitride,hexagonal boron nitride,thru-hole epitaxy,transferability
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