SiV Centers Electroluminescence in Diamond Merged Diode

The results of a study of electroluminescence of silicon vacancy color centers (SiV centers) in a diamond merged diode with a structure involving parallel connection of a p-i-n diode and a Schottky diode are presented. To create color centers, the inner region of the diode is doped with silicon. In the luminescence spectrum, only a line at a wavelength of 738 nm is detected, corresponding to the emission of a SiV color center in a negative charge state. Emission at a wavelength of 946 nm, corresponding to the SiV color center in the neutral charge state, is not detected. The electroluminescence of color centers is observed only in the p-i-n region of the diode, that is, it is experimentally demonstrated that both types of charge carriers are necessary to excite electroluminescence. A pronounced dependence of the photoluminescence intensity of SiV centers on the applied voltage is found.