A Quantum Corrected Compact Model of Experimentally Fabricated GAA 2-D MBCFETs

Gate all around (GAA) 2-D material multibridge-channel (MBC) FET with the thinnest channel could lead to the ultimate scaling of transistor technology. In this work, a physics-based compact model including quantum correction and multiple other physical effects is developed for experimentally fabricated 2-D MBC FET. The model is formulated on the basis of symmetric double gate (DG) potential solutions. By considering the wave functions in the 2-D channel, the quantum mechanical confinement (QMC) is taken into account, and the quantum corrected potential is deduced in analytical form using perturbation approach. The model captures the carrier density distribution across channel accurately, which has been verified by first principle calculations. Furthermore, electrical characteristics, such as ${I}$ – ${V}$ and ${C}$ – ${V}$ models, are created. The models are implemented in Verilog-A and they show good agreement with experimental data.