High-Performance CMOS TIA for Data Center Optical Interconnects
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)(2022)
摘要
An overview of Silicon Photonics and SiGe bipolar TIAs are presented for data center links. CMOS inverter-based TIA circuit topologies for high-bandwidth, low-noise, low-power, and high-linearity are discussed in brief. A design methodology to achieve the best overall receiver sensitivity is presented for a standalone TIA and a TIA codesigned with a DSP. The codesigned TIA methodology is validated using a 106.25 Gbps PAM-4 TIA prototype. Designed in a 16 nm FinFET CMOS process, the TIA with a transimpedance gain of 76 dBΩ has a range of 16 dBΩ. The TIA consumes 103.6 mW, has a -3 dB bandwidth of 18.4 GHz, an input-referred noise of 1.58 µA, and a noise density of 9.7 pA/√Hz.
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关键词
Broadband,CMOS inverter-based amplifiers,dynamic voltage scaling (DVS),high linearity,optical links,PAM-4,transimpedance amplifier (TIA),Silicon Photonics
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