A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBT
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)(2022)
摘要
We present a single-stage G-band power amplifier (PA) with high power density and high efficiency in a 250-nm Indium Phosphide (InP) technology. A pseudo-differential common-base (CB) stage with neutralization capacitors and low-loss coupled-line balun (CLB) are designed to deliver 8.3-12.7-dBm output power and 7.7-17.3% power-added efficiency (PAE) over 180-220 GHz. The use of compact baluns allows the design to occupy only 0.011mm
2
with power density of 1.69 W/mm
2
. The design achieves the highest published PAE and power density above 200 GHz for solid-state PAs.
更多查看译文
关键词
InP,millimeter-wave,G-band,power amplifier,coupled-line balun
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要