Investigation of electrical conduction and optical properties of amorphous Se88Zn10Bi2 chalcogenide thin film

Thin film of Bi incorporated SeZn with a chemical composition of Se88Zn10Bi2 was deposited using the thermal evaporation technique. X-ray diffraction shows the amorphous nature of the film. The optical investigation revealed a wide absorption band in the range of 400-700 nm and the optical bandgap of the film is found to be 1.78 eV. Raman spectrum of the as-synthesized film has been analyzed to confirm the phase purity of the sample. In order to understand the conduction mechanism, the temperature dependence of dc conductivity is investigated in the temperature range 298-380 K.