Band structure engineering and transport properties of graphene/BN van der Waals heterostructures

Yunfei Gao,Lei Xu,Aolin Li,Fangping Ouyang

Results in Physics（2023）

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摘要

•The system exhibits half-metallic and semiconductor phases, under different local voltages.•A fully spin polarized transport device is constructed.•High spin polarization is realized without external field action.•The magnetic tunneling junction with high tunnel magnetoresistance is constructed by adding local gate voltage.

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关键词

Graphene/BN heterostructures,Band structure,Half-metallicity,Transport property

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