Assessment of error variation in high-fidelity two-qubit gates in silicon
arxiv(2023)
摘要
Achieving high-fidelity entangling operations between qubits consistently is
essential for the performance of multi-qubit systems and is a crucial factor in
achieving fault-tolerant quantum processors. Solid-state platforms are
particularly exposed to errors due to materials-induced variability between
qubits, which leads to performance inconsistencies. Here we study the errors in
a spin qubit processor, tying them to their physical origins. We leverage this
knowledge to demonstrate consistent and repeatable operation with above 99
fidelity of two-qubit gates in the technologically important silicon
metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed
study of these operations by analysing the physical errors and fidelities in
multiple devices through numerous trials and extended periods to ensure that we
capture the variation and the most common error types. Physical error sources
include the slow nuclear and electrical noise on single qubits and contextual
noise. The identification of the noise sources can be used to maintain
performance within tolerance as well as inform future device fabrication.
Furthermore, we investigate the impact of qubit design, feedback systems, and
robust gates on implementing scalable, high-fidelity control strategies. These
results are achieved by using three different characterization methods, we
measure entangling gate fidelities ranging from 96.8
tools identify the causes of qubit degradation and offer ways understand their
physical mechanisms. These results highlight both the capabilities and
challenges for the scaling up of silicon spin-based qubits into full-scale
quantum processors.
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