Realizing n-type CdSb with promising thermoelectric performance

Peng Zhao,Honghao Yao,Shizhen Zhi,Xiaojing Ma,Zuoxu Wu,Yijie Liu,Xinyu Wang,Li Yin,Zongwei Zhang,Shuaihang Hou,Xiaodong Wang,Siliang Chen,Chen Chen,Xi Lin,Haoliang Liu,Xingjun Liu,Feng Cao,Qian Zhang,Jun Mao

Journal of Materials Science & Technology（2023）

引用 2|浏览16

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摘要

•n-Type CdSb is realized through indium doping.•The valley degeneracy is as large as ten for the conduction band in CdSb.•Band modeling suggests that the thermoelectric figure of merit could reach ∼1.2 at 450 K under the optimal electron concentration.

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关键词

Thermoelectric materials,n-type CdSb,Indium doping,Band degeneracy

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