III-V material growth on electrochemically porosified Ge substrates

E. Winter,W. Schreiber,P. Schygulla,P.L. Souza,S. Janz, D. Lackner,J. Ohlmann

Journal of Crystal Growth（2023）

引用 7|浏览4

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摘要

•Porosification of germanium substrates for lift-off and reuse.•MOVPE growth of III-V materials on porous germanium substrates.•Comparable material quality for III-V grown on porous Ge and on reference substrates.•Defect analysis of III-V layers grown on porous Ge substrates.•Minority carrier lifetime of III-V layer on porous Ge substrates.

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关键词

A3. Metalorganic vapor phase epitaxy,B2. Semiconducting germanium,B2. Semiconducting III-V materials,A1. Recrystallization,A1. Characterization,B1. Nanomaterials

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