Demonstration of p -type stack-channel ternary logic device using scalable DNTT patterning process

A p -type ternary logic device with a stack-channel structure is demonstrated using an organic p -type semiconductor, dinaphtho[2,3- b :2',3'- f ]thieno[3,2- b ]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate scaled electronic devices with complex organic semiconductor channel structures. Two layers of thin DNTT with a separation layer are fabricated via the low-temperature deposition process, and for the first time, p -type ternary logic switching characteristics exhibiting zero differential conductance in the intermediate current state are demonstrated. The stability of the DNTT stack-channel ternary logic switch device is confirmed by implementing a resistive-load ternary logic inverter circuit.