Epitaxial growth of β-Ga2O3 thin films on SrTiO3 (1 1 1) and (1 0 0) substrates by chemical vapor deposition

•For the first time, the heteroepitaxial β-Ga2O3 (2¯ 01) films were grown on the STO (111) substrates.•The lattice misfit is reduced to 2.4% by considering a supercell matching between β-Ga2O3 and STO.•The crystalline quality is significantly improved by controlling the supply of Ga source.•The narrowest XRD rocking curve of heteroepitaxial β-Ga2O3 film on STO is 0.75°.