X-Band GaN Stacked-FET Power Amplifier

2023 5th Australian Microwave Symposium (AMS)(2023)

引用 0|浏览4
暂无评分
摘要
A MMIC power amplifier is developed on a GaN process using stacked-FET technology. The amplifier delivers 20 W of output power and 25% power added efficiency at 10GHz. Excellent agreement is demonstrated between measurement and simulation.
更多
查看译文
关键词
GaN,stacked-FET
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要