All-inorganic green light-emitting diode based on p-NiO/CsPbBr3/n-GaN heterojunction structure

In recent years, metal halide perovskite materials have attracted great attention in the field of optoelectronics due to their excellent physical properties. However, there are still some problems restricting its practical application. In this paper, a high-quality CsPbBr3 film with good crystalline quality, compact surface morphology and excellent optical properties was obtained by thermal evaporation preparation and annealing optimization. On this basis, p-NiO/CsPbBr3/n-GaN heterojunction diode was prepared. At room temperature, the diode ex-hibits excellent electrical and luminous properties. The I-V curve shows typical rectification behavior. The lu-minous mechanism has also been deeply analyzed. In addition, the temperature dependence of the electrical properties was analyzed. According to the fitting and calculation, the temperature sensitivity coefficients for forward and reverse are 2.446 x 10-4 and-7.094 x 10-6 A/degrees C, and the activation energy is 0.31 eV. It is found that the ambient temperature has a great influence on the luminous properties of the diode. This study dem-onstrates the potential application of p-NiO/CsPbBr3/n-GaN heterojunction diode in the field of luminescence.