Effect of oxygen pressure on the structural and electrical properties of Bi2Mg2/3Nb4/3O7 thin films

Bismuth magnesium niobate (Bi2Mg2/3Nb4/3O7, BMN) films were prepared on indium-doped tin oxide glass substrates via pulsed laser deposition. The effect of oxygen pressure on the structural and electrical properties of the BMN films are investigated. The prepared BMN film presents monoclinic phase, and the surface of the films have good compactness without cracks and pores. With the increase of oxygen pressure, the energy storage density and dielectric constant of the films decrease and subsequently increase, which is related to the influence on the structure and surface morphology of BMN films. The BMN films prepared at 10Pa have the best surface uniformity, with a dielectric constant of 138, a loss tangent of 0.0043, a tunability of 16%, and an energy storage density of 0.749J/cm3.