The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study

Solid-State Electronics(2023)

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摘要
•Transport through the protected edge states of topological insulator nanoribbons is studied, using an atomistic mode-space non-equilibrium Green’s function solver.•When phonon scattering is included, TIs with small bulk gap demonstrate dissipative transport, attributed to the broadening of bulk states into the bulk gap.•If transport is studied only within the edge states, excellent immunity to electron phonon scattering is observed.
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关键词
Semiconductor device modelling,Topological insulators,2D materials,NEGF
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