Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis

Wenita de Lima Silva,Rodrigo do Nascimento Tolêdo,Walter Gonçalez Filho,Alexandro de Moraes Nogueira,Paula Ghedini Der Agopian,Joao Antonio Martino

Solid-State Electronics（2023）

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摘要

•Tunnel field-effect transistors with SiGe source composition.•Circuit-level comparison between Line and Nanowire TFET for analog applications.•gm/ID design using experimental data.•Low-dropout voltage regulator design with Tunnel FET.

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关键词

Tunnel FET (TFET),Nanowire,Line-TFET,Low-Dropout Voltage Regulator (LDO),Process variability,Analog circuit design

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