Supercontinuum Generation in Dispersion Engineered Highly Doped Silica Glass Waveguides

The effect of a lower index oxide layer inclusion within a highly doped silica glass slot waveguide is investigated for optimized supercontinuum generation at telecom wavelengths. By controlling the thickness of the oxide slot, it is demonstrated that one can engineer the waveguide dispersion profile in order to obtain supercontinua with vastly different spectral broadening dynamics and bandwidths. Using this approach, a waveguide with a low and flat dispersion profile of less than 43 pskm-1nm-1$\rm ps\ km<^>{-1}\ nm<^>{-1}$ across a wavelength range spanning over 1000 nm is designed and fabricated. It is shown that, when pumped at the telecom C-band, a supercontinuum that spans over 1.5 octaves can be generated from 817 to 2183 nm. The numerical simulations, whose parameters are derived from the measured waveguide dimension and material indices, exhibit good agreement with experimental measurements, where one can observe both a qualitative and quantitative match in the supercontinuum overall spectrum and specific features (e.g., soliton and dispersive wave locations). This study represents an important step forward in the control and manipulation of dispersive and nonlinear dynamics in highly doped silica glass waveguides, paving the way toward advanced on-chip broadband light manipulation. A dispersion engineered highly-doped silica glass (HDSG) waveguide with a low and flat dispersion profile spanning over 1000 nm is fabricated. When pumped at the telecom C-band, it generates a supercontinuum spectrum that spans over 1.5 octaves, from 817 to 2183 nm. This study represents an important step forward in the control and manipulation of dispersive and nonlinear dynamics in HDSG waveguides for advanced on-chip broadband light manipulation. image