Electrostructural and morphological features of etch pits in boron-doped HPHT-diamond single crystals and multisectoral plates
DIAMOND AND RELATED MATERIALS(2023)
摘要
Morphological, structural, and nano-electrical features of the growth defects and sectoral boundaries revealed by selective etching in synthetic boron-doped single crystals of diamond (BDD) and multisectoral plates are char-acterized by a set of scanning probe microscopy (SPM) methods, confocal micro-Raman, and micro-FTIR spec-troscopy. Diamond single crystals were grown under high pressure and high temperature conditions (HPHT) in the Fe-Al-B-C system. Morphology of dislocation etch pits and micro-defect related pits/protrusions compared both on the growth facets and multisectoral plates cut parallel to the {110} facet of BDD single crystals. Ex situ AFM observation of the etched surface revealed non-homogeneously distributed pits and pro-trusions over the growth facets correlated with irregular macroscopic growth defects. There is a center-to -periphery gradient of dislocation density in multisectoral plates. The protrusions are homogeneously distrib-uted over plates; some often decorate dislocation pits. Micro-Raman mapping on dislocation pits (boron-rich regions) decorated by low-boron content regions revealed crystalline imperfections in three dimensions, with apparent compressive/tensile strain. The defects were mainly electrically neutral under surface potential map-ping by Kelvin probe force microscopy, opposite to the inter-sectoral boundaries having pronounced surface potential steps. The scanning spreading resistance microscopy shows resistivity variations at etching-reviled surface defects and sectoral boundaries if the appropriate DC bias is applied to the SPM tip.
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关键词
IIb HPHT-diamond,Etch pits,Scanning probe microscopy,Micro-Raman spectroscopy,Micro-FTIR spectroscopy
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