S1660103 Suggestion and processing properties of the innovative CMP/P-CVM combined processing method : Breakthrough to the high efficiency processing of wide gap crystal materials

Wide gap semiconductor substrates are hard to process materials, and are manufactured by various processing methods. CMP is a main processing method to planarize a substrate. On the other hand, P-CVM is a superior processing method which does not damage the substrate surface. To achieve high efficiency, high quality processing, we designed an innovative combined CMP/P-CVM processing machine and produced it experimentally. By the CMP/P-CVM combined processing, and it was confirmed the basic processing characteristics of the SiC substrate. As a result, we confirmed increase in removal rate and reduction of the surface roughness by the effect of P-CVM.