A self-disappear-mask for epitaxial lateral overgrowth of GaN films

Wangyibo Chen,Yu Xu,Bing Cao,Chinhua Wang,Jianfeng Wang,Ke Xu

Journal of Crystal Growth（2023）

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摘要

•This work uses a self-disappearance graphene as a mask.•GaN with a self-disappearance graphene mask keeps 2S-ELOG growth mode.•Lower TDDs and stress GaN films was evidenced with the graphene mask.

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关键词

A3.Metalorganic chemical vapor deposition,B1.Nitraides,B1.Graphene,A3. Epitaxial lateral overgrowth,B2.Semiconducting III-V materials

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