High-Performance Midwave Type-II Superlattice Infrared Photodetectors With a Stepped InAs/GaSb Absorber
IEEE Transactions on Electron Devices(2023)
摘要
Due to the short carrier diffusion length, the extraction of photogenerated carriers is one of the key issues in InAs/GaSb superlattice (SL) photodetectors. Here, we report a midinfrared InAs/GaSb SL absorber with a stepped band alignment. The stepped absorber facilitates a better carrier extraction efficiency. Simulation results show that the proposed nBn detector with a stepped absorber exhibited a substantial performance improvement over the nBn detectors with uniform absorbers. At 150 K, the detector with a 3.6-
$\mu \text{m}$
-thick stepped absorber has a maximum quantum efficiency (QE) of
$\sim $
46%, which is about 16% higher than that of the detectors with uniform absorbers. The maximum specific detectivity reached
$\sim 4.26\times 10^{{10}}$
cm
$\cdot $
Hz
$^{\text {1/{2}}}$
/W at 4.9
$\mu \text{m}$
under −0.2 V bias. With the enhanced carrier extraction efficiency, the detectivity can gained a further improvement with a thicker stepped absorber, unlike the detector with a uniform absorber where the detectivity deteriorated with the absorber thickness increased from 3.6 to
$4.2 \mu \text{m}$
.
更多查看译文
关键词
InAs/GaSb,nBn photodetector,quantum efficiency (QE),type-II superlattices (T2SLs)
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要