Epitaxial growth of V2O3 thin films on Si(1 1 1) by molecular beam epitaxy

Alberto Binetti,Wei-Fan Hsu,Koen Schouteden,Jin Won Seo,Jean-Pierre Locquet,Maria Recaman Payo

Results in Physics（2023）

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摘要

•Impact of deposition parameters on VOx film composition and crystallinity.•Epitaxy of MBE-grown V2O3 thin film on unoxidized Si(111) substrate.•Epitaxial growth of V2O3 forming four equivalent domains in the PI phase.•Spontaneous oxidation of silicon after diffusion of O atoms from the V2O3 layer.

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关键词

epitaxial growth,v2o3,thin films,si1

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