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Ge4+取代对BaSnSi3O9陶瓷烧结行为和微波介电性能的优化

Journal of the Chinese Ceramic Society(2023)

华中科技大学 | 华中科技大学光学与电子信息学院

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Abstract
微波介质陶瓷是制造5G通信元件的关键材料,采用传统的固相反应法制备BaSn(Si1–xGex)3O9(0≤x≤1.0)微波介质陶瓷,研究Ge4+取代Si4+对BaSnSi3O9陶瓷烧结行为、晶体结构和微波介电性能的影响.结果表明:BaSnSi3O9陶瓷在最佳的1450℃烧结温度下表现出多孔的微观结构,并呈现较差的微波介电性能(介电常数εr=6.61,品质因数Q×f=7977 GHz(谐振频率为15.03 GHz),τf=?37.8×10–6/℃).通过Ge4+对Si4+的取代能形成BaSn(Si1–xGex)3O9固溶体,其晶体结构为六方结构和P-6c2空间群.采用Ge4+对Si4+的取代促进了BaSn(Si1–xGex)3O9(0≤x≤1.0)陶瓷的烧结,改变了晶体结构参数实现对陶瓷微波介电性能的优化.BaSn(Si1–xGex)3O9(0≤x≤1.0)陶瓷的Q×f值主要与Si/Ge—O和Sn—O键中共价键的比例有关,在x=1.0时BaSn(Si1–xGex)3O9陶瓷具有最优的微波介电性能:εr=8.53,Q×f=15829 GHz(谐振频率为14.41 GHz),τf=?34.2×10–6℃–1.
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