A Radiation Hardened Smart Power Switch Based on SOI Technology

Two smart power switches were designed with the control circuit and the power transistor implemented in 0.6 μm Silicon on Insulator (SOI) technology. One version was implemented with standard transistors and the other with Radiation Hardened by Design (RHBD) techniques. These protection devices are used as current limiting circuits in power distribution systems. The short-circuit peak current was eliminated by adding an inductor in the power path and optimizing the frequency response of the system. The functional validation of the proposed circuits was carried out through simulations and test results.