A Mo/Si multilayer film based selective thermal emitter for high-temperature infrared stealth application

Thermal radiation regulation technology plays a vital role in the fields of military camouflage and energy uti-lization. Here, a Mo/Si multilayer film based selective thermal emitter for high-temperature infrared stealth application is demonstrated by virtue of the tunneling effect of ultrathin metal layers as well as impedance matching to modulate the radiation properties. The fabricated selective emitter exhibits low emissivity of epsilon 3-5 mu m approximate to 0.26 and epsilon 8-14 mu m approximate to 0.36 at the atmospheric windows for infrared "invisibility" and high emissivity of epsilon 5-8 mu m approximate to 0.75 at the non-atmospheric window for radiative cooling. As observed from infrared thermal images, the prepared sample shows reduced surface temperature compared to the ambient temperature. The radiation temperature on sample surface is only 425.7 degrees C when the heating temperature increase to 600 degrees C, indicating the good dissipation ability of surface heat at high temperature. Moreover, the multilayer film device exhibits good infrared camouflage capability and thermal stability as the heating temperature reaches up to 650 degrees C. The fabricated selective thermal emitter has promising prospects in high-temperature infrared stealth technology.