Effects of Chirped Barrier Thickness on InGaN/GaN and InGaN/InGaN MQW LEDs

In this paper, we present the effect of chirped barrier on the optical properties of InGaN/GaN and InGaN/InGaN multi quantum wells (MQWs) based light-emitting diodes. It is observed that the chirped barrier configuration of InGaN/GaN and InGaN/InGaN MQWs leads to enhanced performance in terms of reduced leakage current, IQE droop, polarization charges at interfaces, increased Hole injection, better carrier distribution, increased carrier wave function overlap, etc. The InGaN/InGaN chirped barrier configuration has shown the best results among all the four LED structures considered in this study. The IQE droop is reduced from 14 to 1