Nitrogen-doped beta-Ga2O3 vertical transistors with a threshold voltage of >= 1.3 V and a channel mobility of 100 cm(2) V-1 s(-1)

We demonstrate high-performance normally-off multi-fin beta-Ga2O3 vertical transistors with a wide fin width from 1.0 to 2.0 mu m by using a nitrogen-doped beta-Ga2O3 high-resistive layer grown by halide vapor phase epitaxy. Normally-off operation was achieved with a threshold voltage of >= 1.3 V, a specific on-resistance of 2.9 m Omega.cm(2) and a current density of 760 A cm(-2) at a gate voltage of +10 V. The estimated MOS channel field effect mobility was similar to 100 cm(2) V-1 s(-1). These findings offer important insights on the development of Ga2O3 MOSFETs and show the great promise of Ga2O3 vertical power devices. (c) 2023 The Japan Society of Applied Physics