Enhanced InAs phase formation in the In plus - and As plus -implanted SiO2 films covered with Si3N4 layers

The Raman spectroscopy and room-temperature photoluminescence were used to study the properties of the In+ and As+ ion-implanted SiO2 films as a function of annealing temperature Ta at 700-1100 degrees C. No features of the InAs phase were obtained in the Raman spectra of the native SiO2 films irrespective of Ta. In the ion-implanted SiO2 films encapsulated with Si3N4, three Raman peaks at 202 cm -1, 256 cm- 1 and 232 cm- 1 corresponding to transverse and longitudinal optical phonons in black As and to longitudinal optical phonons in InAs, respectively, were detected. The SiO2 encapsulation effect on the enhanced InAs phase formation is discussed. A photo-luminescence of around 556 nm was observed from the encapsulated ion-implanted SiO2 films and reached its intensity maximum after the annealing at 1000 degrees C.