Short-Channel Effects in Independently Controlled MG-MOSFET

Although silicon thickness scaling is the key for reducing short-channel effects, advanced MOSFET structure still suffers from the effect even with multi-gate control. To get a better insight to the origin of the short-channel effects for independently controlled multi-gate MOSFET, investigation is performed here for the very thin SOI layer and BOX thickness. It is found that the microscopic potential distribution within the device is the result of balance among different electric field induced within the device. A new compact model describing the effect is developed by considering the potential distribution at the contact/channel junction explicitly, which is modified by additional induced field by the back-gate voltage. The model was verified with 2D-device simulation results for different channel length devices, and good agreement is verified.