Analysis of the Experimental Curve of Magnetization of a Silicon Nanosandwich with the Use of Numerical Simulation

The field dependence of the magnetization of a silicon nanosandwich observed at room temperature exhibits quite a complicated character, mainly due to the contribution of the quantum magnetic effect, which is interpreted as the de Haas–van Alphen effect at integer and fractional filling factors. Based on the earlier found two-dimensional carrier density of carriers, the critical fields for the corresponding filling factors have been calculated. Simulation of the de Haas–van Alphen oscillations has been performed at a high temperature ( T=300 K) based on the given energy density distribution of the silicon nanosandwich states in the neighborhood of the Landau levels by means of a calculation procedure realized at a supercomputer. The dependence of the effective mass of carriers on the strength of an external magnetic field that we revealed earlier has been taken into account.