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Tuning Zinc Doping Content to Optimize Optical and Structural Properties of Cd 1− X Zn X S Buffer Layers

Optoelectronics Letters/Optoelectronics letters(2023)

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摘要
In this paper,Cd1-xZnxS thin films were prepared by chemical bath deposition(CBD),and the effects of different zinc doping content on the morphological structure and optical properties of Cd1-xZnxS buffer layers are systematically dis-cussed.The experimental results show that in the deposition process of different substrates,the crystal structure of the film is all hexagonal,and when the concentration of zinc sulfate(ZnSO4)precursor is varied from 0 to 0.025 M,the films are uniform and dense.With the increase of zinc content,the X-ray diffraction(XRD)peak of the films shifted behind that of CdS film(002).It showed 70%to 90%transmittance in the visible region and the optical band gap in-creased gradually.The band gap value of the films obtained ranged from 2.43 eV to 3.01 eV.It shows the potential feasibility of its application to photovoltaic devices.
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